X-RAY REFLECTIVITY AND DIFFUSE-SCATTERING STUDY OF COSI2 LAYERS IN SI PRODUCED BY ION-BEAM SYNTHESIS

被引：72

作者：

BAHR, D ^{[1
]}

PRESS, W ^{[1
]}

JEBASINSKI, R ^{[1
]}

MANTL, S ^{[1
]}

机构：

[1] FORSCHUNGSZENTRUM JULICH, FORSCHUNGSZENTRUM, W-5170 JULICH 1, GERMANY

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.47.4385

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Buried single crystalline layers of CoSi2 in Si with (001) and (111) surfaces were produced by ion-beam synthesis. Depending on the annealing procedure, surface orientation, and ion dose, different results in interface quality are achieved. X-ray experiments under grazing incidence conditions (specular and diffuse scattering) are used for the investigation of their properties. We present a quantitative evaluation of the diffuse scattering underneath the specular reflectivity for multilayer systems with strongly varying electron densities.

引用

页码：4385 / 4393

页数：9

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