ION-BEAM SYNTHESIS OF EPITAXIAL SILICIDES - FABRICATION, CHARACTERIZATION AND APPLICATIONS

被引:205
作者
MANTL, S
机构
[1] Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich, W-5170 Jülich
来源
MATERIALS SCIENCE REPORTS | 1992年 / 8卷 / 1-2期
关键词
D O I
10.1016/0920-2307(92)90006-M
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The technique of synthesizing buried epitaxial silicides by high-dose ion implantation and subsequent high-temperature annealing is reviewed. This technique, called mesotaxy, is at present the best way to produce high-quality buried epitaxial CoSi2 in (100) Si and buried alpha- and beta-FeSi2 in (111) Si. In this report the experimental work of the first four years of mesotaxy is reviewed. The review begins with a brief introduction to epitaxial silicides, ion beam synthesis, and mesotaxy. This is followed by a discussion of the simulation of high-dose ion implantation. Next the microstructure during mesotaxial layer growth is described, including its dependence on implantation and annealing parameters. After the summary of the experimental results of the microstructure, particular emphasis is placed on discussing the growth process and developing a basic understanding of the mesotaxial process including nucleation and growth of precipitates during irradiation and coarsening, coalescence, and layer formation during annealing. Properties of buried CoSi2 and NiSi2 layers in (100) and (111) Si are reviewed and discussed. Results on the formation of buried NiSi2, (Ni1-xCox)Si2, alpha- and beta-FeSi2, CrSi2 and ErSi2 layers are also summarized. The first device applications are reported in which ion beam synthesis provides significant advantages over other techniques.
引用
收藏
页码:1 / 95
页数:95
相关论文
共 221 条
  • [1] ON SCHOTTKY-BARRIER INHOMOGENEITIES AT SILICIDE SILICON INTERFACES
    ABOELFOTOH, MO
    [J]. JOURNAL OF APPLIED PHYSICS, 1991, 69 (05) : 3351 - 3353
  • [2] AHN KY, 1988, MATER RES SOC S P, V107, P501
  • [3] Ardell A. J., 1988, Phase Transformations '87. Proceedings of the Conference, P485
  • [4] ON MODULATED STRUCTURE OF AGED NI-AL ALLOYS
    ARDELL, AJ
    NICHOLSO.RB
    [J]. ACTA METALLURGICA, 1966, 14 (10): : 1295 - +
  • [5] THE FORMATION OF SILICIDES FROM THIN-FILMS OF SOME RARE-EARTH-METALS
    BAGLIN, JE
    HEURLE, FMD
    PETERSSON, CS
    [J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 594 - 596
  • [6] Berger S. D., 1989, Nanostructure Physics and Fabrication. Proceedings of the International Symposium, P401
  • [7] T-DYN MONTE-CARLO SIMULATIONS APPLIED TO ION ASSISTED THIN-FILM PROCESSES
    BIERSACK, JP
    BERG, S
    NENDER, C
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 59 : 21 - 27
  • [8] BOLDYREV V, 1973, FESTKORPERCHEMIE, P374
  • [9] DEPTH PROFILING BY ION-BEAM SPECTROMETRY
    BORGESEN, P
    BEHRISCH, R
    SCHERZER, BMU
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 27 (04): : 183 - 195
  • [10] A CLARIFICATION OF THE INDEX OF REFRACTION OF BETA-IRON DISILICIDE
    BOST, MC
    MAHAN, JE
    [J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (04) : 2034 - 2037