ON SCHOTTKY-BARRIER INHOMOGENEITIES AT SILICIDE SILICON INTERFACES

The Schottky-barrier heights of several silicides on both n- and p-Si (100) have been measured in the temperature range 77-295 K. The results deviate significantly from the predictions of a recent model based on the assumption of barrier height inhomogeneities at such interfaces. For all these interfaces, the sum of the barrier heights to n-and p-Si (100) is always equal, within the experimental accuracy, to the indirect band gap of Si. Furthermore, the temperature dependence of the barrier height suggests that the Fermi level at these interfaces is pinned relative to the Si valence-band edge.