EQUALITY OF TEMPERATURE DEPENDENCE OF GOLD-SILICON SURFACE BARRIER + SILICON ENERGY GAP IN AU N-TYPE SI DIODES ( PHOTOEMISSION THRESHOLD ANALYSIS 100-370 DEGREES K E )

被引：57

作者：

CROWELL, CR

SZE, SM

SPITZER, WG

机构：

来源：

关键词：

D O I：

10.1063/1.1753976

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：91 / &

共 6 条

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[2] ATTENUATION LENGTH MEASUREMENTS OF HOT ELECTRONS IN METAL FILMS
CROWELL, CR
HOWARTH, LE
SPITZER, WG
LABATE, EE
[J]. PHYSICAL REVIEW, 1962, 127 (06): : 2006 - &
[3] CONDUCTION PROPERTIES OF THE AU-NORMAL-TYPE-SI SCHOTTKY BARRIER
KAHNG, D
[J]. SOLID-STATE ELECTRONICS, 1963, 6 (03) : 281 - 295
[4] MCLEAN TP, 1960, PROGR SEMICOND, V5, P53
[5] FERMI LEVEL POSITION AT SEMICONDUCTOR SURFACES
MEAD, CA
SPITZER, WG
[J]. PHYSICAL REVIEW LETTERS, 1963, 10 (11) : 471 - &
[6] SZE SM, TO BE PUBLISHED