THE FORMATION OF SILICIDES FROM THIN-FILMS OF SOME RARE-EARTH-METALS

被引：127

作者：

BAGLIN, JE

HEURLE, FMD

PETERSSON, CS

机构：

来源：

关键词：

D O I：

10.1063/1.91559

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：594 / 596

页数：3

共 28 条

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[2] FORMATION OF NISI AND CURRENT TRANSPORT ACROSS NISI-SI INTERFACE
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[3] FORMATION OF SILICIDES IN MO-W BILAYER FILMS ON SI SUBSTRATES - MARKER EXPERIMENT
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DEMPSEY, J
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DHEURLE, F
PETERSSON, S
SERRANO, C
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (05) : 641 - 661
[4] INTERFACE-MARKER TECHNIQUE APPLIED TO THE STUDY OF METAL SILICIDE GROWTH
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PETERSSON, S
[J]. NUCLEAR INSTRUMENTS & METHODS, 1980, 168 (1-3): : 491 - 497
[5] BOULESTEIX C, 1971, 9TH P RAR EARTH RES, V1, P379
[6] BOWER RW, 1973, SOLID STATE ELECTRON, V16, P1461, DOI 10.1016/0038-1101(73)90063-4
[7] COE DJ, 1974, METAL SEMICONDUCTOR, P74
[8] ELLIOTT RP, 1965, CONSTITUTION BINARY, P823
[9] REACTION-KINETICS OF MOLYBDENUM THIN-FILMS ON SILICON(111) SURFACE
GUIVARCH, A
AUVRAY, P
BERTHOU, L
LECUN, M
BOULET, JP
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PELOUS, G
MARTINEZ, A
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (01) : 233 - 237
[10] VALENCE FLUCTUATIONS OF YTTERBIUM IN SILICON-RICH COMPOUNDS
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OLCESE, GL
[J]. JOURNAL OF THE LESS-COMMON METALS, 1979, 64 (02): : 213 - 220