REACTION-KINETICS OF MOLYBDENUM THIN-FILMS ON SILICON(111) SURFACE

被引：81

作者：

GUIVARCH, A ^{[1
]}

AUVRAY, P ^{[1
]}

BERTHOU, L ^{[1
]}

LECUN, M ^{[1
]}

BOULET, JP ^{[1
]}

HENOC, P ^{[1
]}

PELOUS, G ^{[1
]}

MARTINEZ, A ^{[1
]}

机构：

[1] LAB AUTOMAT & ANAL SYST,7 RUE COLONEL ROCH,F-31400 TOULOUSE,FRANCE

来源：

关键词：

D O I：

10.1063/1.324337

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：233 / 237

页数：5

共 15 条

[1] [Anonymous], 1975, EQUILIBRIUM GEN KINE
[2] AUVRAY P, UNPUBLISHED
[3] CHARACTERIZATION OF SILICON METALLIZATION SYSTEMS USING ENERGETIC ION BACKSCATTERING
BORDERS, JA
PICRAUX, ST
[J]. PROCEEDINGS OF THE IEEE, 1974, 62 (09) : 1224 - 1231
[4] BORDERS JA, 1974, APPL ION BEAMS METAL, P179
[5] GROWTH KINETICS OBSERVED IN FORMATION OF METAL SILICIDES ON SILICON
BOWER, RW
MAYER, JW
[J]. APPLIED PHYSICS LETTERS, 1972, 20 (09) : 359 - &
[6] GRAIN-GROWTH AND STRESS RELIEF IN THIN-FILMS
CHAUDHAR.P
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1972, 9 (01): : 520 - &
[7] IMPLANTED NOBLE-GAS ATOMS AS DIFFUSION MARKERS IN SILICIDE FORMATION
CHU, WK
LAU, SS
MAYER, JW
MULLER, H
[J]. THIN SOLID FILMS, 1975, 25 (02) : 393 - 402
[8] INFLUENCE OF STRESS IN SOLID-SOLID INTERDIFFUSION
DEARNALEY, G
HARTLEY, NEW
[J]. PHYSICS LETTERS A, 1974, A 46 (05) : 345 - 346
[9] GAGE PR, 1965, T METALL SOC AIME, V233, P832
[10] GUIVARCH A, 1977, P C SURFACE PHYSICS