T-DYN MONTE-CARLO SIMULATIONS APPLIED TO ION ASSISTED THIN-FILM PROCESSES

被引:151
作者
BIERSACK, JP [1 ]
BERG, S [1 ]
NENDER, C [1 ]
机构
[1] UNIV UPPSALA,INST TECHNOL,S-75123 UPPSALA,SWEDEN
关键词
D O I
10.1016/0168-583X(91)95167-C
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The need for computer aided fabrication of modern semiconductor devices calls for reliable algorithms describing complex processes. A number of programs exist for predicting the outcome of several processing steps. In this article we present a new Monte Carlo program, T-DYN, version 2 (1990), which is an extension of the TRIM-CASCADE code. The standard TRIM codes give information about all collisional effects caused by single ions impinging on a virgin target. It does not take into account the target alterations which occur at high dose exposures. A previous TRIM version, TRIM-DYN, takes these alterations into consideration but has the drawback of requiring "super computers" with high operating speed. Process modeling, however, has to be performed in an environment where super computers are normally not available. The new version T-DYN uses different concepts which are more suitable for computer realizations and hence may be operated on advanced personal computers. This makes the program more attractive for applications also by processing engineers. Thin film processing normally involves atom deposition or atom sputter ejection from a surface exposed to some particle fluxes. Thin films are therefore built up or removed. Simulation of thin film processes calls for a code which takes into consideration gradual alterations in the thin film/bulk structure during exposure to the incoming flux. The new T-DYN program can handle energetic ion bombardment and simultaneous deposition of neutral atoms at the surface of the structure. The changes due to previous events are stored and subsequent events will then take into account such updated information. The present paper describes some computational details of the T-DYN program and also presents results obtained.
引用
收藏
页码:21 / 27
页数:7
相关论文
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