ION ASSISTED SELECTIVE THIN-FILM DEPOSITION

被引：9

作者：

BERG, S ^{[1
]}

NENDER, C ^{[1
]}

GELIN, B ^{[1
]}

OSTLING, M ^{[1
]}

机构：

[1] INST MICROWAVE TECHNOL,S-10044 STOCKHOLM,SWEDEN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1986年 / 4卷 / 03期

关键词：

D O I：

10.1116/1.573903

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：448 / 452

页数：5

共 5 条

[1] INITIAL ETCHING IN AN RF BUTANE PLASMA
ANDERSSON, LP
BERG, S
[J]. VACUUM, 1978, 28 (10-1) : 449 - 451
[2] SELF-LIMITING ETCH DEPTHS USING SIMULTANEOUS SPUTTER ETCHING DEPOSITION TECHNIQUE
BERG, S
GELIN, B
OSTLING, M
BABULANAM, SM
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 470 - 473
[3] INFLUENCE OF SUBSTRATE MATERIAL ON THE INITIAL THIN-FILM GROWTH DURING ION DEPOSITION FROM A GLOW-DISCHARGE
BERG, S
GELIN, B
SVARDSTROM, A
BABULANAM, SM
[J]. VACUUM, 1984, 34 (10-1) : 969 - 973
[4] Chu W. K., 1978, BACKSCATTERING SPECT
[5] HOROWITZ CM, 1983, APPL PHYS LETT, V42, P898