INFLUENCE OF SUBSTRATE MATERIAL ON THE INITIAL THIN-FILM GROWTH DURING ION DEPOSITION FROM A GLOW-DISCHARGE

被引：8

作者：

BERG, S

GELIN, B

SVARDSTROM, A

BABULANAM, SM

机构：

来源：

关键词：

D O I：

10.1016/0042-207X(84)90180-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：969 / 973

页数：5

共 7 条

[1] INITIAL ETCHING IN AN RF BUTANE PLASMA
ANDERSSON, LP
BERG, S
[J]. VACUUM, 1978, 28 (10-1) : 449 - 451
[2] SELF-LIMITING ETCH DEPTHS USING SIMULTANEOUS SPUTTER ETCHING DEPOSITION TECHNIQUE
BERG, S
GELIN, B
OSTLING, M
BABULANAM, SM
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 470 - 473
[3] BERG S, UNPUB
[4] Chapman B., 1980, GLOW DISCHARGE PROCE
[5] Chu WK., 1978, BACKSCATTERING SPECT
[6] Coburn J.W., 1982, AVS MONOGRAPH SERIES
[7] PLASMA-ETCHING - DISCUSSION OF MECHANISMS
COBURN, JW
WINTERS, HF
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 391 - 403