RECOMBINATION PROCESSES IN INTRINSIC SEMICONDUCTORS USING IMPACT IONIZATION CAPTURE CROSS-SECTIONS IN INDIUM-ANTIMONIDE AND MERCURY CADMIUM TELLURIDE

被引：30

作者：

PINES, MY ^{[1
]}

STAFSUDD, OM ^{[1
]}

机构：

[1] UNIV CALIF LOS ANGELES,LOS ANGELES,CA 90024

来源：

INFRARED PHYSICS | 1980年 / 20卷 / 02期

关键词：

D O I：

10.1016/0020-0891(80)90011-1

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：73 / 91

页数：19

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