LOW-TEMPERATURE RECOMBINATION OF ELECTRONS AND DONORS IN N-TYPE GERMANIUM AND SILICON

被引：69

作者：

BROWN, RA

RODRIGUEZ, S

机构：

来源：

PHYSICAL REVIEW | 1967年 / 153卷 / 03期

关键词：

D O I：

10.1103/PhysRev.153.890

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：890 / +

页数：1

共 22 条

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[3] RECOMBINATION OF ELECTRONS AND DONORS IN N-TYPE GERMANIUM. B
ASCARELLI, G
RODRIGUEZ, S
[J]. PHYSICAL REVIEW, 1962, 127 (01): : 167 - &
[4] PIEZORESISTANCE AND PIEZO-HALL-EFFECT IN N-TYPE SILICON
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GUBLER, W
HENNINGSEN, T
KOENIG, SH
[J]. PHYSICAL REVIEW, 1963, 130 (05): : 1667 - +
[5] REMARKS ON RECOMBINATION OF ELECTRONS AND DONORS IN N-TYPE GERMANIUM
BELEZNAY, F
PATAKI, G
[J]. PHYSICA STATUS SOLIDI, 1966, 13 (02): : 499 - &
[6] BROWN R, 1964, B AM PHYS SOC 2, V9, P62
[7] EFFECT OF IMPURITY CONDUCTION ON ELECTRON RECOMBINATION IN GERMANIUM AND SILICON AT LOW TEMPERATURES
BROWN, RA
[J]. PHYSICAL REVIEW, 1966, 148 (02): : 974 - &
[8] BROWN RA, 1964, THESIS PURDUE U
[9] THERMAL CAPTURE OF ELECTRONS IN SILICON
GUMMEL, H
[J]. ANNALS OF PHYSICS, 1957, 2 (01) : 28 - 56
[10] CASCADE CAPTURE OF ELECTRONS BY IONIZED IMPURITIES
HAMANN, DR
MCWHORTER, AL
[J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 134 (1A): : A250 - &