THE INFLUENCE OF THE SURFACE AND OXIDE CHARGE ON THE SURFACE RECOMBINATION PROCESS

The surface contribution to the total recombination process is usually expressed by two linear boundary conditions with a constant parameter, called the surface recombination velocity, which neglects the influence of the Si-SiO2 interface and SiO2 layer and represents a caw which can exist only under special conditions. In the past few years some valuable theories of surface and grain boundary recombination have appeared in the literature, however, these models describe cases in which the surface potential can be controlled externally. In contactless characterization methods the sample of interest has no contacts, which means that the surface potential is determined internally. This surface potential is not a priori known since it is determined by the surface, the oxide parameters and also by the bulk parameters such as the doping and the transport parameters. This paper will present a general model capable of describing the surface recombination in the case of contactless measurement.