COMMENTS ON THE USE OF THE SURFACE RECOMBINATION VELOCITY CONCEPT

被引：17

作者：

CORREIG, X

CALDERER, J

BLASCO, E

ALCUBILLA, R

机构：

[1] Dept. d'Enginyeria Electrònica, E.T.S.E. Telecomunicació (Universitat Politècnica de Catalunya), 08034 Barcelona, C/J. Girona Salgado s/n

来源：

SOLID-STATE ELECTRONICS | 1990年 / 33卷 / 05期

关键词：

D O I：

10.1016/0038-1101(90)90230-C

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The surface recombination velocity is usually taken as a constant parameter to define a boundary condition for the continuity equation. In this paper, a model of surface recombination current and carrier concentration that takes into account the surface variables (surface states, surface voltage, ...) and the injection level in the bulk is developed. The results obtained allow two main regimes of recombination to be distinguished: injection limited and surface limited recombination. We can assign a constant value to S only for surfaces working under certain conditions. Its value and its range of validity depend on the set of surface and bulk parameters and also on the injection level. © 1990.

引用

页码：477 / 484

页数：8

共 12 条

[1]

BERZ F, 1975, SURFACE PHYSICS PHOS

[2]

CORREIG X, 1988, THESIS BARCELONA

[3] SURFACE RECOMBINATION VELOCITY - A USEFUL CONCEPT - COMMENT [J].

DEVISSCHERE, P .

SOLID-STATE ELECTRONICS, 1986, 29 (11) :1161-1165

[4] ON THE RECOMBINATION AND DIFFUSION LIMITED SURFACE RECOMBINATION VELOCITIES [J].

DHARIWAL, SR ;

MEHROTRA, DR .

SOLID-STATE ELECTRONICS, 1988, 31 (09) :1355-1361

[5]

FRANKL DR, 1967, ELECTRICAL PROPERTIE, pCH3

[6]

GROVE AS, 1967, PHYS TECHNOL S, P299

[7]

Hovel H.J., 1975, SEMICONDUCTORS SEMIM, V11

[8]

MANY A, 1965, SEMICONDUCTOR SURFAC, pCH5

[9]

PIERRET RF, 1987, ADV SEMICONDUCTOR FU, V6, P166

[10] SURFACE RECOMBINATION VELOCITY - A USEFUL CONCEPT [J].

REES, GJ .

SOLID-STATE ELECTRONICS, 1985, 28 (05) :517-519

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