SURFACE RECOMBINATION VELOCITY - A USEFUL CONCEPT

被引：24

作者：

REES, GJ

机构：

[1] Allen Clark Research Cent, Towcester, Engl, Allen Clark Research Cent, Towcester, Engl

来源：

SOLID-STATE ELECTRONICS | 1985年 / 28卷 / 05期

关键词：

SEMICONDUCTOR DEVICES;

D O I：

10.1016/0038-1101(85)90116-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A simple model for surface recombination via deep traps is used to relate recombination rate R to excess carrier concentration delta n. The model predicts R varies directly as ( delta n)** one-half by contrast with the usual recombination velocity picture which assumes R varies directly as delta n.

引用

页码：517 / 519

页数：3

共 8 条

[1]

HENRY C, 1977, PHYS REV B, V13, P989

[2] EFFECT OF SURFACE RECOMBINATION ON CURRENT IN ALXGA1-XAS HETEROJUNCTIONS [J].