SURFACE RECOMBINATION STATISTICS AT TRAPS

[1] VARIATION OF MINORITY-CARRIER LIFETIME WITH LEVEL OF INJECTION IPARA-NORMAL-JUNCTION DEVICES [J]. ELECTRONICS LETTERS, 1982, 18 (07) : 298 - 299

[2] INTERFACIAL STATES SPECTRUM OF A METAL-SILICON JUNCTION [J]. SOLID-STATE ELECTRONICS, 1976, 19 (01) : 73 - 75

[3] ON THE RECOMBINATION OF ELECTRONS AND HOLES AT TRAPS WITH FINITE RELAXATION-TIME [J]. SOLID-STATE ELECTRONICS, 1981, 24 (08) : 749 - 752

[4] RECOMBINATION STATISTICS FOR AUGER EFFECTS WITH APPLICATIONS TO P-N JUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1963, 6 (02) : 169 - 181

[5] AUGER RECOMBINATION WITH DEEP IMPURITIES IN INDIRECT BAND-GAP SEMICONDUCTORS [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1981, 108 (02): : 443 - 448

[6] SOME GENERAL RECOMBINATION STATISTICS FOR SEMICONDUCTOR SURFACES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (08) : 1284 - 1286

[7] A CONTRIBUTION TO THE RECOMBINATION STATISTICS OF EXCESS CARRIERS IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1957, 70 (03): : 282 - 296

[8] SURFACE RECOMBINATION EFFECTS IN AN IMPROVED THEORY OF A PARA-TYPE MIS SOLAR-CELL [J]. SOLID-STATE ELECTRONICS, 1980, 23 (11) : 1139 - 1145

[9] DEFECTS WITH SEVERAL TRAPPING LEVELS IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (10): : 1056 - 1059

[10] LANDSBERG PT, 1960, SOLID STATE PHYSIC 1, P436

[1] VARIATION OF MINORITY-CARRIER LIFETIME WITH LEVEL OF INJECTION IPARA-NORMAL-JUNCTION DEVICES [J]. ELECTRONICS LETTERS, 1982, 18 (07) : 298 - 299

[2] INTERFACIAL STATES SPECTRUM OF A METAL-SILICON JUNCTION [J]. SOLID-STATE ELECTRONICS, 1976, 19 (01) : 73 - 75

[3] ON THE RECOMBINATION OF ELECTRONS AND HOLES AT TRAPS WITH FINITE RELAXATION-TIME [J]. SOLID-STATE ELECTRONICS, 1981, 24 (08) : 749 - 752

[4] RECOMBINATION STATISTICS FOR AUGER EFFECTS WITH APPLICATIONS TO P-N JUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1963, 6 (02) : 169 - 181

[5] AUGER RECOMBINATION WITH DEEP IMPURITIES IN INDIRECT BAND-GAP SEMICONDUCTORS [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1981, 108 (02): : 443 - 448

[6] SOME GENERAL RECOMBINATION STATISTICS FOR SEMICONDUCTOR SURFACES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (08) : 1284 - 1286

[7] A CONTRIBUTION TO THE RECOMBINATION STATISTICS OF EXCESS CARRIERS IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1957, 70 (03): : 282 - 296

[8] SURFACE RECOMBINATION EFFECTS IN AN IMPROVED THEORY OF A PARA-TYPE MIS SOLAR-CELL [J]. SOLID-STATE ELECTRONICS, 1980, 23 (11) : 1139 - 1145

[9] DEFECTS WITH SEVERAL TRAPPING LEVELS IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (10): : 1056 - 1059

[10] LANDSBERG PT, 1960, SOLID STATE PHYSIC 1, P436