ON THE RECOMBINATION OF ELECTRONS AND HOLES AT TRAPS WITH FINITE RELAXATION-TIME

[1] TRAP SATURATION IN SILICON SOLAR CELLS [J]. APPLIED PHYSICS LETTERS, 1975, 27 (04) : 239 - 241

[2] ELECTRON-HOLE RECOMBINATION IN GERMANIUM [J]. PHYSICAL REVIEW, 1952, 87 (02): : 387 - 387

[3] CASCADE CAPTURE OF ELECTRONS IN SOLIDS [J]. PHYSICAL REVIEW, 1960, 119 (05): : 1502 - 1523

[4] Pogany A., 1980, Fourteenth IEEE Photovoltaic Specialists Conference 1980, P410

[5] THERMAL GENERATION OF RECOMBINATION CENTERS IN SILICON [J]. PHYSICAL REVIEW, 1957, 108 (06): : 1428 - 1433

[6] STATISTICS OF THE CHARGE DISTRIBUTION FOR A LOCALIZED FLAW IN A SEMICONDUCTOR [J]. PHYSICAL REVIEW, 1957, 107 (02): : 392 - 396

[7] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J]. PHYSICAL REVIEW, 1952, 87 (05): : 835 - 842

[1] TRAP SATURATION IN SILICON SOLAR CELLS [J]. APPLIED PHYSICS LETTERS, 1975, 27 (04) : 239 - 241

[2] ELECTRON-HOLE RECOMBINATION IN GERMANIUM [J]. PHYSICAL REVIEW, 1952, 87 (02): : 387 - 387

[3] CASCADE CAPTURE OF ELECTRONS IN SOLIDS [J]. PHYSICAL REVIEW, 1960, 119 (05): : 1502 - 1523

[4] Pogany A., 1980, Fourteenth IEEE Photovoltaic Specialists Conference 1980, P410

[5] THERMAL GENERATION OF RECOMBINATION CENTERS IN SILICON [J]. PHYSICAL REVIEW, 1957, 108 (06): : 1428 - 1433

[6] STATISTICS OF THE CHARGE DISTRIBUTION FOR A LOCALIZED FLAW IN A SEMICONDUCTOR [J]. PHYSICAL REVIEW, 1957, 107 (02): : 392 - 396

[7] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J]. PHYSICAL REVIEW, 1952, 87 (05): : 835 - 842