THERMAL GENERATION OF RECOMBINATION CENTERS IN SILICON

被引：52

作者：

ROSS, B

MADIGAN, JR

机构：

来源：

PHYSICAL REVIEW | 1957年 / 108卷 / 06期

关键词：

D O I：

10.1103/PhysRev.108.1428

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1428 / 1433

页数：6

共 23 条

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