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INTERFACIAL STATES SPECTRUM OF A METAL-SILICON JUNCTION

被引：43
作者：
BARRET, C [1 ]
VAPAILLE, A [1 ]
机构：
[1] UNIV PARIS 11,INST ELECTR FONDAMENTALE,BATIMENT 220,91405 ORSAY,FRANCE
来源：
SOLID-STATE ELECTRONICS | 1976年 / 19卷 / 01期
关键词：
D O I：
10.1016/0038-1101(76)90135-0
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：73 / 75
页数：3
相关论文
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