DEVELOPMENT AND CONFIRMATION OF THE UNIFIED MODEL FOR SCHOTTKY-BARRIER FORMATION AND MOS INTERFACE STATES ON III-V COMPOUNDS

被引：84

作者：

SPICER, WE

EGLASH, S

LINDAU, I

SU, CY

SKEATH, PR

机构：

来源：

THIN SOLID FILMS | 1982年 / 89卷 / 04期

关键词：

D O I：

10.1016/0040-6090(82)90325-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：447 / 460

页数：14

共 58 条

[1] ENERGY STRUCTURE IN PHOTOELECTRIC EMISSION FROM CS-COVERED SILICON AND GERMANIUM [J].

ALLEN, FG ;

GOBELI, GW .

PHYSICAL REVIEW, 1966, 144 (02) :558-&

[2]

ALLEN RE, 1982, PHYS REV

[3]

ALLEN RE, UNPUB SOLID STATE CO

[4]

ANDERSON JM, 1975, PHYS REV LETT, V35, P56

[5]

BELL RL, 1973, NEGATIVE ELECTRON AF

[6]

Brillson L. J., 1980, Journal of the Physical Society of Japan, V49, P1089

[7] CHEMICAL-REACTIONS AND LOCAL CHARGE REDISTRIBUTION AT METAL-CDS AND CDSE INTERFACES [J].

BRILLSON, LJ .

PHYSICAL REVIEW B, 1978, 18 (06) :2431-2446

[8] PHOTO-VOLTAGE SATURATION AND RECOMBINATION AT AL-GAAS INTERFACIAL LAYERS [J].

BRILLSON, LJ ;

KRUGER, DW .

SURFACE SCIENCE, 1981, 102 (2-3) :518-526

[9] CHEMICALLY-INDUCED CHARGE REDISTRIBUTION AT AL-GAAS INTERFACES [J].

BRILLSON, LJ ;

BACHRACH, RZ ;

BAUER, RS ;

MCMENAMIN, J .

PHYSICAL REVIEW LETTERS, 1979, 42 (06) :397-401

[10]

Cardona M., 1978, PHOTOEMISSION SOLIDS

← 1 2 3 4 5 6 →