DEVELOPMENT AND CONFIRMATION OF THE UNIFIED MODEL FOR SCHOTTKY-BARRIER FORMATION AND MOS INTERFACE STATES ON III-V COMPOUNDS

被引:84
作者
SPICER, WE
EGLASH, S
LINDAU, I
SU, CY
SKEATH, PR
机构
关键词
D O I
10.1016/0040-6090(82)90325-X
中图分类号
T [工业技术];
学科分类号
08 ;
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页码:447 / 460
页数:14
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