SURFACE VACANCIES IN INP AND GAAIAS

被引：68

作者：

DAW, MS

SMITH, DL

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 08期

关键词：

D O I：

10.1063/1.91594

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：690 / 692

页数：3

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[1] SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .1. TIGHT-BINDING DESCRIPTION OF VACANCIES IN SI, GE, AND GAAS
BERNHOLC, J
PANTELIDES, ST
[J]. PHYSICAL REVIEW B, 1978, 18 (04): : 1780 - 1789
[2] SCHOTTKY-BARRIER HEIGHT OF AU ON N-GA1-XALXAS AS A FUNCTION OF ALAS CONTENT
BEST, JS
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (08) : 522 - 527
[3] (110) SURFACE ATOMIC STRUCTURES OF COVALENT AND IONIC SEMICONDUCTORS
CHADI, DJ
[J]. PHYSICAL REVIEW B, 1979, 19 (04): : 2074 - 2082
[4] PHOTOEMISSION STUDY OF AU SCHOTTKY-BARRIER FORMATION ON GASB, GAAS, AND INP USING SYNCHROTRON RADIATION
CHYE, PW
LINDAU, I
PIANETTA, P
GARNER, CM
SU, CY
SPICER, WE
[J]. PHYSICAL REVIEW B, 1978, 18 (10): : 5545 - 5559
[5] VACANCIES NEAR SEMICONDUCTOR SURFACES
DAW, MS
SMITH, DL
[J]. PHYSICAL REVIEW B, 1979, 20 (12): : 5150 - 5156
[6] KOSHIGA F, UNPUBLISHED
[7] NEW PHENOMENA IN SCHOTTKY-BARRIER FORMATION ON III-V-COMPOUNDS
LINDAU, I
CHYE, PW
GARNER, CM
PIANETTA, P
SU, CY
SPICER, WE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1332 - 1339
[8] CAPACITANCE-VOLTAGE AND SURFACE PHOTO-VOLTAGE MEASUREMENTS OF PYROLYTICALLY DEPOSITED SIO2 ON INP
MEINERS, LG
[J]. THIN SOLID FILMS, 1979, 56 (1-2) : 201 - 207
[9] SOME OPTICAL-PROPERTIES OF ALXGA1-XAS ALLOY SYSTEM
MONEMAR, B
SHIH, KK
PETTIT, GD
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) : 2604 - 2613
[10] INTERACTION OF CHLORINE WITH INDIUM-PHOSPHIDE SURFACES
MONTGOMERY, V
WILLIAMS, RH
VARMA, RR
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1978, 11 (10): : 1989 - 2000