SURFACE VACANCIES IN II-VI AND III-V ZINC BLENDE SEMICONDUCTORS

被引：43

作者：

DAW, MS

SMITH, DL

SWARTS, CA

MCGILL, TC

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 03期

关键词：

D O I：

10.1116/1.571048

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：508 / 512

页数：5

共 17 条

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[7] ENERGY-LEVELS OF SEMICONDUCTOR SURFACE VACANCIES
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 1028 - 1031
[8] DAW MS, UNPUBLISHED
[9] TRENDS IN SURFACE ATOMIC GEOMETRIES OF COMPOUND SEMICONDUCTORS
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[10] DUKE CB, UNPUBLISHED