STRUCTURAL AND ELECTRICAL-PROPERTIES OF NOBLE METAL-HYDROGENATED AMORPHOUS-SILICON INTERFACES

被引：10

作者：

TSAI, CC

THOMPSON, MJ

NEMANICH, RJ

机构：

来源：

JOURNAL DE PHYSIQUE | 1981年 / 42卷 / NC4期

关键词：

D O I：

10.1051/jphyscol:19814236

中图分类号：

学科分类号：

摘要：

引用

页码：1077 / 1080

页数：4

共 13 条

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