TUNNELING ESCAPE TIME OF ELECTRONS FROM A QUANTUM-WELL WITH GAMMA-X MIXING EFFECT

被引：9

作者：

ZHANG, YM

ZHENG, HZ

机构：

[1] National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 08期

关键词：

D O I：

10.1063/1.112144

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By using the envelope function method we calculated the tunneling escape time of electrons from a quantum well. We adopted a simplified interface matrix to describe the GAMMA-X mixing effect, and employed a wave packet method to determine the tunneling escape time. When the GAMMA state in the well was in resonance with the X state in the barrier, the escape time reduced remarkably. However, it was possible that the wave functions in two different channels, i.e., GAMMA-GAMMA-GAMMA and GAMMA-X-GAMMA, could interfere destructively, leading the escape time greater than that of pure GAMMA-GAMMA-GAMMA tunneling.

引用

页码：1036 / 1038

页数：3

共 14 条

[1] CONNECTION OF ENVELOPE FUNCTIONS AT SEMICONDUCTOR HETEROINTERFACES .2. MIXINGS OF GAMMA-VALLEYS AND CHI-VALLEYS IN GAAS/ALXGA1-XAS [J].

ANDO, T ;

AKERA, H .

PHYSICAL REVIEW B, 1989, 40 (17) :11619-11633

[2] VALLEY MIXING IN SHORT-PERIOD SUPERLATTICES AND THE INTERFACE MATRIX [J].

ANDO, T .

PHYSICAL REVIEW B, 1993, 47 (15) :9621-9628

[3] CONNECTION OF ENVELOPE FUNCTIONS AT SEMICONDUCTOR HETEROINTERFACES .1. INTERFACE MATRIX CALCULATED IN SIMPLEST MODELS [J].

ANDO, T ;

WAKAHARA, S ;

AKERA, H .

PHYSICAL REVIEW B, 1989, 40 (17) :11609-11618

[4] THE EFFECT OF THE X-CONDUCTION BAND MINIMA ON RESONANT TUNNELING AND CHARGE BUILDUP IN DOUBLE BARRIER STRUCTURES BASED ON N-GAAS/(ALGA)AS [J].

FOSTER, TJ ;

LEADBEATER, ML ;

MAUDE, DK ;

ALVES, ES ;

EAVES, L ;

HENINI, M ;

HUGHES, OH ;

CELESTE, A ;

PORTAL, JC ;

LANCEFIELD, D ;

ADAMS, AR .

SOLID-STATE ELECTRONICS, 1989, 32 (12) :1731-1735

[5] VALLEY MIXING IN GAAS/ALAS MULTILAYER STRUCTURES IN THE EFFECTIVE-MASS METHOD [J].

FU, Y ;

WILLANDER, M ;

IVCHENKO, EL ;

KISELEV, AA .

PHYSICAL REVIEW B, 1993, 47 (20) :13498-13507

[6] A NEW MATRIX-METHOD FOR TUNNELLING IN HETEROSTRUCTURES - GAMMA, X EFFECTS IN SINGLE-BARRIER SYSTEMS [J].

KO, DYK ;

INKSON, JC .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (08) :791-796

[7]

KO DYK, 1991, NATO ADV SCI I B-PHY, V277, P149

[8] DIRECT DETERMINATION OF THE ELECTRON-TUNNELING ESCAPE TIME FROM A GAAS/ALXGA1-XAS QUANTUM-WELL BY TRANSIENT-CAPACITANCE SPECTROSCOPY [J].

MARTINET, E ;

ROSENCHER, E ;

CHEVOIR, F ;

NAGLE, J ;

BOIS, P .

PHYSICAL REVIEW B, 1991, 44 (07) :3157-3161

[9] OBSERVATION BY RESONANT TUNNELING OF HIGH-ENERGY STATES IN GAAS-GA1-XALXAS QUANTUM-WELLS [J].

MENDEZ, EE ;

CALLEJA, E ;

GONCALVESDASILVA, CET ;

CHANG, LL ;

WANG, WI .

PHYSICAL REVIEW B, 1986, 33 (10) :7368-7370

[10] TUNNELING ESCAPE TIME OF ELECTRONS FROM A QUANTUM WELL UNDER THE INFLUENCE OF AN ELECTRIC-FIELD [J].

NORRIS, TB ;

SONG, XJ ;

SCHAFF, WJ ;

EASTMAN, LF ;

WICKS, G ;

MOUROU, GA .

APPLIED PHYSICS LETTERS, 1989, 54 (01) :60-62

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