ELECTROREFLECTANCE MEASUREMENTS ON MG2SI MG2GE AND MG2SN

被引:48
作者
VAZQUEZ, F
FORMAN, RA
CARDONA, M
机构
[1] Department of Physics, Brown University, Providence
[2] National Science Foundation, College Teachers Research Participation Program
[3] University of Puerto Rico, Department of Electrical Engineering, Mayagez
[4] National Bureau of Standards, Washington
来源
PHYSICAL REVIEW | 1968年 / 176卷 / 03期
基金
美国国家科学基金会;
关键词
D O I
10.1103/PhysRev.176.905
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The room-temperature electroreflectance spectra of the II-VI compounds Mg2Si, Mg2Ge, and Mg2Sn are reported in the energy region 1.5-4.5 eV. All measurements were performed using the electrolyte technique with a nonaqueous electrolyte. These materials crystallize with the antifluorite crystal structure and are small-band-gap semiconductors. In all of the materials, a large number of sharp peaks were observed; the spectra are interpreted in terms of the reflectivity spectra and existing energy-band calculations. Special mention should be made of a doublet observed (1.64-1.84 eV) in the spectrum of Mg2Ge. This doublet appears to be due to the spin-orbit splitting of the 15 valence band. © 1968 The American Physical Society.
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页码:905 / &
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