ELECTROREFLECTANCE MEASUREMENTS ON MG2SI MG2GE AND MG2SN

被引：48

作者：

VAZQUEZ, F

FORMAN, RA

CARDONA, M

机构：

[1] Department of Physics, Brown University, Providence

[2] National Science Foundation, College Teachers Research Participation Program

[3] University of Puerto Rico, Department of Electrical Engineering, Mayagez

[4] National Bureau of Standards, Washington

来源：

PHYSICAL REVIEW | 1968年 / 176卷 / 03期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1103/PhysRev.176.905

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The room-temperature electroreflectance spectra of the II-VI compounds Mg2Si, Mg2Ge, and Mg2Sn are reported in the energy region 1.5-4.5 eV. All measurements were performed using the electrolyte technique with a nonaqueous electrolyte. These materials crystallize with the antifluorite crystal structure and are small-band-gap semiconductors. In all of the materials, a large number of sharp peaks were observed; the spectra are interpreted in terms of the reflectivity spectra and existing energy-band calculations. Special mention should be made of a doublet observed (1.64-1.84 eV) in the spectrum of Mg2Ge. This doublet appears to be due to the spin-orbit splitting of the 15 valence band. © 1968 The American Physical Society.

引用

页码：905 / &