ZnSe epilayers have been heteroepitaxially deposited on GaAs substrates by vapor phase epitaxy (VPE) using hydrogen in an open tube reactor. The photoluminescence (PL) spectra and electrical properties of the ZnSe epilayers depend on the substrate temperature, Zn vapor treatment and purity of source materials. The origin of the blue emission at room temperature (RT) of the ZnSe epilayers is ascribed to exciton-carrier interaction. The pure blue electroluminescence (EL) at room temperature from a forward biased MIS diode of VPE ZnSe epilayer is reported for the first time. The blue stimulated emission, which is ascribed to exciton-exciton interactions at 77 K from a VPE ZnSe epilayer under 337.1 nm excitation from a N2 laser, is also reported for the first time. © 1989.