CHARACTERIZATION AND IDENTIFICATION OF THE DEEP LEVELS IN V DOPED CDTE AND THEIR RELATIONSHIP WITH THE PHOTOREFRACTIVE PROPERTIES

被引：29

作者：

BREMOND, G

ZERRAI, A

MARRAKCHI, G

AOUDIA, A

MARFAING, Y

TRIBOULET, R

BUSCH, MC

KOEBBEL, JM

HAGEALI, M

SIFFERT, P

MOISAN, JY

机构：

[1] CNRS,F-92195 MEUDON,FRANCE

[2] CNRS,PHASE,F-67037 STRASBOURG,FRANCE

[3] CTR NATL ETUD TELECOMMUN,F-22301 LANNION,FRANCE

来源：

OPTICAL MATERIALS | 1995年 / 4卷 / 2-3期

关键词：

We would thank gratefully M. Pugnet for fruitfull discussions and some of the authors; G; Br6mond; A. Zerrai and G. Marrakchi are grateful to J. Gr6goire for her technical help. This work has been financially supported by the french telecommunication administration (Centre National d'Etude et T616communication );

D O I：

10.1016/0925-3467(94)00068-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Deep level characterization by photoinduced current transient spectroscopy, deep level transient spectroscopy and deep level optical spectroscopy is presented on vanadium doped CdTe crystals grown for photorefractive applications. A main electron trap at 0.95 eV, connected with V doping, is proposed to be the main deep level involved in the photorefractive effect of CdTe:V on the bases of the sigma(n)(0) and sigma(p)(0) ionization cross-sections measurements as compared to spectroscopic results of the electron-hole competition factor obtained on CdTe:V.

引用

页码：246 / 251

页数：6

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