THE GROWTH AND PROPERTIES OF HIGH-PERFORMANCE ALGALNP EMITTERS USING A LATTICE MISMATCHED GAP WINDOW LAYER

被引：88

作者：

FLETCHER, RM ^{[1
]}

KUO, CP ^{[1
]}

OSENTOWSKI, TD ^{[1
]}

HUANG, KH ^{[1
]}

CRAFORD, MG ^{[1
]}

ROBBINS, VM ^{[1
]}

机构：

[1] HEWLETT PACKARD CO,PALO ALTO,CA 94304

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1991年 / 20卷 / 12期

关键词：

ALGAINP; LED; OMVPE;

D O I：

10.1007/BF03030219

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The growth and properties of high performance surface light emitting diodes which utilize a GaP window layer are presented. The devices consist of an AlGaInP double heterostructure lattice matched to a GaAs substrate. A lattice mismatched GaP layer is then grown on top of the heterostructure. The resulting upper confining and window layers have high electrical conductivity and optical transmissivity allowing for the fabrication of red-orange and yellow emitters with performance superior to existing commercial technologies. The effect of different confining and window layer structures on device performance is described, including characteristics of the shortest wavelength AlGaInP green emitters yet reported.

引用

页码：1125 / 1130

页数：6

共 6 条

[1] COOK LW, 1988, 14TH P INT S GAAS RE, P777
[2] Craford M. G., 1985, FLAT PANEL DISPLAY C, P289
[3] FLETCHER RM, 1989, 15TH P INT S GAAS RE, P563
[4] STIMULATED-EMISSION IN IN0.5(ALXGA1-X)0.5P QUANTUM WELL HETEROSTRUCTURES
KUO, CP
FLETCHER, RM
OSENTOWSKI, TD
CRAFORD, MG
NAM, DW
HOLONYAK, N
HSIEH, KC
FOUQUET, JE
[J]. JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) : 389 - 395
[5] HIGH-PERFORMANCE ALGAINP VISIBLE LIGHT-EMITTING-DIODES
KUO, CP
FLETCHER, RM
OSENTOWSKI, TD
LARDIZABAL, MC
CRAFORD, MG
ROBBINS, VM
[J]. APPLIED PHYSICS LETTERS, 1990, 57 (27) : 2937 - 2939
[6] HIGH-EFFICIENCY INGAALP/GAAS VISIBLE LIGHT-EMITTING-DIODES
SUGAWARA, H
ISHIKAWA, M
HATAKOSHI, G
[J]. APPLIED PHYSICS LETTERS, 1991, 58 (10) : 1010 - 1012

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