STIMULATED-EMISSION IN IN0.5(ALXGA1-X)0.5P QUANTUM WELL HETEROSTRUCTURES

被引：14

作者：

KUO, CP

FLETCHER, RM

OSENTOWSKI, TD

CRAFORD, MG

NAM, DW

HOLONYAK, N

HSIEH, KC

FOUQUET, JE

机构：

[1] UNIV ILLINOIS,CTR COMPOUND SEMICOND MICROELECTR,ELECT ENGN RES LAB,URBANA,IL 61801

[2] HEWLETT PACKARD LABS,PALO ALTO,CA 94304

[3] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 93卷 / 1-4期

关键词：

Crystals--Epitaxial Growth - Lasers; Semiconductor - Microscopic Examination--Transmission Electron Microscopy - Semiconducting Gallium Arsenide;

D O I：

10.1016/0022-0248(88)90558-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

For shorter wavelength lasers (λ1-yGayP lattice matched to GaAs (y approx. 0.5) and its variant, the case of Al-Ga substitution, In0.5(AlxGa1-x)0.5P. We report the growth of quantum well heterostructures (QWHs) in this system by metalorganic vapor phase epitaxy and the photopumped (77 K) laser operation of InAlGaP QWHs at wavelengths ranging from the orange to the green portions of the spectrum. Continuous wave (CW) photopumped laser operation at 77 K is achieved in the range from approx. 570.0 to approx. 550.0 nm (2.175 to 2.254 ev), and pulsed operation to wavelengths as short as 543.0 nm (2.283 ev). This paper will describe the epitaxial layers grown, the characterization of these layers using a variety of techniques, including TEM, and the laser operation experiments and results.

引用

页码：389 / 395

页数：7

共 19 条

[1] GAINP-ALGAINP-GAAS HETEROSTRUCTURES GROWN BY MOVPE AT ATMOSPHERIC-PRESSURE
ANDRE, JP
DUPONTNIVET, E
MORONI, D
PATILLON, JN
ERMAN, M
NGO, T
[J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 354 - 359
[2] CHEMICAL ORDERING IN GAXIN1-XP SEMICONDUCTOR ALLOY GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
BELLON, P
CHEVALIER, JP
MARTIN, GP
DUPONTNIVET, E
THIEBAUT, C
ANDRE, JP
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (07) : 567 - 569
[3] HIGH-POWER (1.4W) ALGAINP GRADED-INDEX SEPARATE CONFINEMENT HETEROSTRUCTURE VISIBLE (LAMBDA-APPROXIMATELY-658-NM) LASER
BOUR, DP
SHEALY, JR
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (21) : 1658 - 1660
[4] CASEY HC, 1978, HETEROSTRUCTURE LA A, P42
[5] EVIDENCE FOR THE EXISTENCE OF AN ORDERED STATE IN GA0.5IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY AND ITS RELATION TO BAND-GAP ENERGY
GOMYO, A
SUZUKI, T
KOBAYASHI, K
KAWATA, S
HINO, I
YUASA, T
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (11) : 673 - 675
[6] LOW-THRESHOLD ROOM-TEMPERATURE CW OPERATION OF (ALGAAS)M(GAAS)N SUPERLATTICE QUANTUM-WELL LASERS EMITTING AT APPROXIMATELY-680 NM
HAYAKAWA, T
SUYAMA, T
TAKAHASHI, K
KONDO, M
YAMAMOTO, S
HIJIKATA, T
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (10) : 707 - 709
[7] CONTINUOUS WAVE OPERATION (77-K) OF YELLOW (583.6 NM) EMITTING ALGALNP DOUBLE HETEROSTRUCTURE LASER-DIODES
HINO, I
KAWATA, S
GOMYO, A
KOBAYASHI, K
SUZUKI, T
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (09) : 557 - 558
[8] ROOM-TEMPERATURE CONTINUOUS OPERATION OF PHOTOPUMPED MO-CVD ALXGA1-XAS-GAAS-ALXGA1-XAS QUANTUM-WELL LASERS
HOLONYAK, N
KOLBAS, RM
DUPUIS, RD
DAPKUS, PD
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (01) : 73 - 75
[9] YELLOW-EMITTING ALGALNP DOUBLE HETEROSTRUCTURE LASER DIODE AT 77-K GROWN BY ATMOSPHERIC METALORGANIC CHEMICAL VAPOR-DEPOSITION
IKEDA, M
HONDA, M
MORI, Y
KANEKO, K
WATANABE, N
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (09) : 964 - 966
[10] ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF A GAINP/ALGAINP MULTIQUANTUM WELL LASER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
IKEDA, M
TODA, A
NAKANO, K
MORI, Y
WATANABE, N
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (16) : 1033 - 1034

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