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SILANE SILICIDATION OF MO THIN-FILMS
被引:14
作者
:
CHOW, TP
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,INTEGRATED CIRCUITS LAB,DEPT ELECT & SYST ENGN,TROY,NY 12181
RENSSELAER POLYTECH INST,INTEGRATED CIRCUITS LAB,DEPT ELECT & SYST ENGN,TROY,NY 12181
CHOW, TP
[
1
]
BROWN, DM
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,INTEGRATED CIRCUITS LAB,DEPT ELECT & SYST ENGN,TROY,NY 12181
RENSSELAER POLYTECH INST,INTEGRATED CIRCUITS LAB,DEPT ELECT & SYST ENGN,TROY,NY 12181
BROWN, DM
[
1
]
STECKL, AJ
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,INTEGRATED CIRCUITS LAB,DEPT ELECT & SYST ENGN,TROY,NY 12181
RENSSELAER POLYTECH INST,INTEGRATED CIRCUITS LAB,DEPT ELECT & SYST ENGN,TROY,NY 12181
STECKL, AJ
[
1
]
GARFINKEL, M
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,INTEGRATED CIRCUITS LAB,DEPT ELECT & SYST ENGN,TROY,NY 12181
RENSSELAER POLYTECH INST,INTEGRATED CIRCUITS LAB,DEPT ELECT & SYST ENGN,TROY,NY 12181
GARFINKEL, M
[
1
]
机构
:
[1]
RENSSELAER POLYTECH INST,INTEGRATED CIRCUITS LAB,DEPT ELECT & SYST ENGN,TROY,NY 12181
来源
:
JOURNAL OF APPLIED PHYSICS
|
1980年
/ 51卷
/ 11期
关键词
:
D O I
:
10.1063/1.327518
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:5981 / 5985
页数:5
相关论文
共 5 条
[1]
BARTLETT RW, 1964, T METALL SOC AIME, V230, P1528
[2]
SIZE EFFECTS IN MOSI2-GATE MOSFETS
CHOW, TP
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
CHOW, TP
STECKL, AJ
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
STECKL, AJ
[J].
APPLIED PHYSICS LETTERS,
1980,
36
(04)
: 297
-
299
[3]
1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE
CROWDER, BL
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
CROWDER, BL
ZIRINSKY, S
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
ZIRINSKY, S
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
26
(04)
: 369
-
371
[4]
MOCHIZUKI T, 1977, JPN J APPL PHYS S, V17, P37
[5]
THIN-FILM INTERACTION BETWEEN TITANIUM AND POLYCRYSTALLINE SILICON
MURARKA, SP
论文数:
0
引用数:
0
h-index:
0
MURARKA, SP
FRASER, DB
论文数:
0
引用数:
0
h-index:
0
FRASER, DB
[J].
JOURNAL OF APPLIED PHYSICS,
1980,
51
(01)
: 342
-
349
←
1
→
共 5 条
[1]
BARTLETT RW, 1964, T METALL SOC AIME, V230, P1528
[2]
SIZE EFFECTS IN MOSI2-GATE MOSFETS
CHOW, TP
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
CHOW, TP
STECKL, AJ
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
STECKL, AJ
[J].
APPLIED PHYSICS LETTERS,
1980,
36
(04)
: 297
-
299
[3]
1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE
CROWDER, BL
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
CROWDER, BL
ZIRINSKY, S
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
ZIRINSKY, S
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
26
(04)
: 369
-
371
[4]
MOCHIZUKI T, 1977, JPN J APPL PHYS S, V17, P37
[5]
THIN-FILM INTERACTION BETWEEN TITANIUM AND POLYCRYSTALLINE SILICON
MURARKA, SP
论文数:
0
引用数:
0
h-index:
0
MURARKA, SP
FRASER, DB
论文数:
0
引用数:
0
h-index:
0
FRASER, DB
[J].
JOURNAL OF APPLIED PHYSICS,
1980,
51
(01)
: 342
-
349
←
1
→