学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
NOISE PERFORMANCE OF MICROWAVE GAAS FET AMPLIFIERS AT LOW-TEMPERATURES
被引:5
作者
:
MILLER, RE
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
MILLER, RE
PHILLIPS, TG
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
PHILLIPS, TG
IGLESIAS, DE
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
IGLESIAS, DE
KNERR, RH
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
KNERR, RH
机构
:
[1]
BELL TEL LABS INC,MURRAY HILL,NJ 07974
[2]
BELL TEL LABS INC,ALLENTOWN,PA 18103
来源
:
ELECTRONICS LETTERS
|
1977年
/ 13卷
/ 01期
关键词
:
D O I
:
10.1049/el:19770008
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:10 / 11
页数:2
相关论文
共 5 条
[1]
OPERATION OF 6GHZ F E T AMPLIFIER AT REDUCED AMBIENT-TEMPERATURE
BURA, P
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LTD,ST ANNE DE BELLEVUE,MONTREAL,QUEBEC,CANADA
RCA LTD,ST ANNE DE BELLEVUE,MONTREAL,QUEBEC,CANADA
BURA, P
[J].
ELECTRONICS LETTERS,
1974,
10
(10)
: 181
-
182
[2]
JIMENEZ J, 1973, P EUROPEAN MICROWAVE, V1
[3]
PERFORMANCE OF GAAS MESFETS AT LOW-TEMPERATURES
LIECHTI, CA
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD CO,SOLID STATE LAB,PALO ALTO,CA 94304
HEWLETT PACKARD CO,SOLID STATE LAB,PALO ALTO,CA 94304
LIECHTI, CA
LARRICK, RB
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD CO,SOLID STATE LAB,PALO ALTO,CA 94304
HEWLETT PACKARD CO,SOLID STATE LAB,PALO ALTO,CA 94304
LARRICK, RB
[J].
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES,
1976,
24
(06)
: 376
-
381
[4]
BEHAVIOUR OF A LOW-NOISE MICROWAVE FET AT LOW TEMPERATURE
LORIOU, B
论文数:
0
引用数:
0
h-index:
0
LORIOU, B
BELLEC, M
论文数:
0
引用数:
0
h-index:
0
BELLEC, M
LEROUZIC, M
论文数:
0
引用数:
0
h-index:
0
LEROUZIC, M
[J].
ELECTRONICS LETTERS,
1970,
6
(25)
: 819
-
&
[5]
PIERRO J, 1976, IEEE MTTS INT MICROW, P93
←
1
→
共 5 条
[1]
OPERATION OF 6GHZ F E T AMPLIFIER AT REDUCED AMBIENT-TEMPERATURE
BURA, P
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LTD,ST ANNE DE BELLEVUE,MONTREAL,QUEBEC,CANADA
RCA LTD,ST ANNE DE BELLEVUE,MONTREAL,QUEBEC,CANADA
BURA, P
[J].
ELECTRONICS LETTERS,
1974,
10
(10)
: 181
-
182
[2]
JIMENEZ J, 1973, P EUROPEAN MICROWAVE, V1
[3]
PERFORMANCE OF GAAS MESFETS AT LOW-TEMPERATURES
LIECHTI, CA
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD CO,SOLID STATE LAB,PALO ALTO,CA 94304
HEWLETT PACKARD CO,SOLID STATE LAB,PALO ALTO,CA 94304
LIECHTI, CA
LARRICK, RB
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD CO,SOLID STATE LAB,PALO ALTO,CA 94304
HEWLETT PACKARD CO,SOLID STATE LAB,PALO ALTO,CA 94304
LARRICK, RB
[J].
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES,
1976,
24
(06)
: 376
-
381
[4]
BEHAVIOUR OF A LOW-NOISE MICROWAVE FET AT LOW TEMPERATURE
LORIOU, B
论文数:
0
引用数:
0
h-index:
0
LORIOU, B
BELLEC, M
论文数:
0
引用数:
0
h-index:
0
BELLEC, M
LEROUZIC, M
论文数:
0
引用数:
0
h-index:
0
LEROUZIC, M
[J].
ELECTRONICS LETTERS,
1970,
6
(25)
: 819
-
&
[5]
PIERRO J, 1976, IEEE MTTS INT MICROW, P93
←
1
→