DELTA-DOPED OHMIC CONTACTS TO N-GAAS

[1] ALLOYED OHMIC CONTACTS TO GAAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 803 - 807

[2] THE EFFECT OF GROWTH-CONDITIONS ON SI INCORPORATION IN MOLECULAR-BEAM EPITAXIAL GAAS [J]. APPLIED PHYSICS LETTERS, 1981, 39 (10) : 800 - 803

[3] OHMIC CONTACTS FOR GAAS DEVICES [J]. SOLID-STATE ELECTRONICS, 1967, 10 (12) : 1213 - +

[4] CUNNINGHAM J, UNPUB

[5] NON-ALLOYED AND INSITU OHMIC CONTACTS TO HIGHLY DOPED N-TYPE GAAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXY (MBE) FOR FIELD-EFFECT TRANSISTORS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) : 951 - 954

[6] SI INCORPORATION IN ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (04): : 957 - 960

[7] DIRECT OBSERVATION OF BALLISTIC TRANSPORT IN GAAS [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (20) : 2200 - 2203

[8] INJECTED-HOT-ELECTRON TRANSPORT IN GAAS [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (19) : 2071 - 2073

[9] HEAVILY SI-DOPED GAAS AND ALAS/N-GAAS SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (08): : L572 - L574

[10] Rhoderick E.H., 1978, METAL SEMICONDUCTORS

[1] ALLOYED OHMIC CONTACTS TO GAAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 803 - 807

[2] THE EFFECT OF GROWTH-CONDITIONS ON SI INCORPORATION IN MOLECULAR-BEAM EPITAXIAL GAAS [J]. APPLIED PHYSICS LETTERS, 1981, 39 (10) : 800 - 803

[3] OHMIC CONTACTS FOR GAAS DEVICES [J]. SOLID-STATE ELECTRONICS, 1967, 10 (12) : 1213 - +

[4] CUNNINGHAM J, UNPUB

[5] NON-ALLOYED AND INSITU OHMIC CONTACTS TO HIGHLY DOPED N-TYPE GAAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXY (MBE) FOR FIELD-EFFECT TRANSISTORS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) : 951 - 954

[6] SI INCORPORATION IN ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (04): : 957 - 960

[7] DIRECT OBSERVATION OF BALLISTIC TRANSPORT IN GAAS [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (20) : 2200 - 2203

[8] INJECTED-HOT-ELECTRON TRANSPORT IN GAAS [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (19) : 2071 - 2073

[9] HEAVILY SI-DOPED GAAS AND ALAS/N-GAAS SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (08): : L572 - L574

[10] Rhoderick E.H., 1978, METAL SEMICONDUCTORS