Q DEPENDENCE OF IMPATT-DIODE FM NOISE

被引：7

作者：

HARTH, W

ULRICH, G

机构：

[1] Institut für Technische Electronik Technische Hochschule, München

来源：

ELECTRONICS LETTERS | 1969年 / 5卷 / 01期

关键词：

D O I：

10.1049/el:19690005

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Measurement of Q MPATT-diode-oscillator f.m. noise, for external Q factors ranging between 100 and 10000, showed that the product of r.m.s. frequency deviation and square root of power output is inversely proportional to the Q factor, in accordance with the Edson formula for f.m. oscillator noise. The excess-noise temperature, varying between 30 and 50 dB, rapidly increases with current through the diode. The correlation for f.m. and a.m. noise lies between 0·8 and 1. © 1969, The Institution of Electrical Engineers. All rights reserved.

引用

页码：7 / &

共 6 条

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PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (02) :223-+

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