POSITION AND CHARACTER (GAMMA OR X) OF ENERGY-STATES IN SHORT-PERIOD (GAAS)M(ALAS)N SUPERLATTICES

被引:34
作者
NAGLE, J
GARRIGA, M
STOLZ, W
ISU, T
PLOOG, K
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来源
JOURNAL DE PHYSIQUE | 1987年 / 48卷 / C-5期
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D O I
10.1051/jphyscol:19875105
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页码:495 / 498
页数:4
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共 14 条
[1]  
CASEY HC, 1978, HETEROSTRUCTURE LA A, P192
[2]   OPTICAL EVIDENCE OF THE DIRECT-TO-INDIRECT-GAP TRANSITION IN GAAS-ALAS SHORT-PERIOD SUPERLATTICES [J].
DANAN, G ;
ETIENNE, B ;
MOLLOT, F ;
PLANEL, R ;
JEANLOUIS, AM ;
ALEXANDRE, F ;
JUSSERAND, B ;
LEROUX, G ;
MARZIN, JY ;
SAVARY, H ;
SERMAGE, B .
PHYSICAL REVIEW B, 1987, 35 (12) :6207-6212
[3]   X-POINT EXCITONS IN AIAS/GAAS SUPERLATTICES [J].
FINKMAN, E ;
STURGE, MD ;
TAMARGO, MC .
APPLIED PHYSICS LETTERS, 1986, 49 (19) :1299-1301
[4]  
GARRIGA M, IN PRESS PHYS REV B
[5]   ZONE FOLDING, MORPHOGENESIS OF CHARGE-DENSITIES, AND THE ROLE OF PERIODICITY IN GAAS-ALXGA1-XAS (001) SUPERLATTICES [J].
GELL, MA ;
NINNO, D ;
JAROS, M ;
HERBERT, DC .
PHYSICAL REVIEW B, 1986, 34 (04) :2416-2427
[6]   EPITAXIAL STRUCTURES WITH ALTERNATE ATOMIC-LAYER COMPOSITION MODULATION [J].
GOSSARD, AC ;
PETROFF, PM ;
WEIGMANN, W ;
DINGLE, R ;
SAVAGE, A .
APPLIED PHYSICS LETTERS, 1976, 29 (06) :323-325
[7]   EFFECTS OF THE LAYER THICKNESS ON THE ELECTRONIC CHARACTER IN GAAS-ALAS SUPERLATTICES [J].
IHM, J .
APPLIED PHYSICS LETTERS, 1987, 50 (16) :1068-1070
[8]   OPTICAL-PROPERTIES OF (AIAS)N(GAAS)N SUPERLATTICES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
ISHIBASHI, A ;
MORI, Y ;
ITABASHI, M ;
WATANABE, N .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) :2691-2695
[9]   ULTRATHIN-LAYER (ALAS)M(GAAS)M SUPERLATTICES WITH M = 1,2,3 GROWN BY MOLECULAR-BEAM EPITAXY [J].
ISU, T ;
JIANG, DS ;
PLOOG, K .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1987, 43 (01) :75-79
[10]  
JIANG DS, IN PRESS J APPL PHYS