A DIFFUSION CALCULATION OF AXIAL DECHANNELING IN SI AND GE

被引：30

作者：

MATSUNAMI, N ^{[1
]}

HOWE, LM ^{[1
]}

机构：

[1] ATOM ENERGY CANADA LTD, CHALK RIVER NUCL LABS, SOLID STATE SCI BRANCH, CHALK RIVER K0J 1J0, ONTARIO, CANADA

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1980年 / 51卷 / 1-2期

关键词：

D O I：

10.1080/00337578008209274

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：111 / 126

页数：16

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[2]

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[3]

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BOGH, E .

CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) :653-&

[5]

BONDERUP E, 1972, RADIAT EFF, V12, P261

[6] CRYOGENIC SYSTEM FOR LOW-TEMPERATURE AND CLEAN-ENVIRONMENT CHANNELING MEASUREMENTS [J].

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DAVIES, JA ;

LORI, J ;

WHITTON, JL .

NUCLEAR INSTRUMENTS & METHODS, 1973, 109 (03) :579-583

[7]

BOTTIGER J, 1974, 1973 P YORKT HEIGHTS, P239

[8]

Campisano S. U., 1972, Radiation Effects, V13, P157, DOI 10.1080/00337577208231175

[9]

Campisano S. U., 1971, Radiation Effects, V9, P153, DOI 10.1080/00337577108231044

[10] CHANNELING OF MEV PROJECTILES IN TUNGSTEN AND SILICON [J].

DAVIES, JA ;

DENHARTOG, J ;

WHITTON, JL .

PHYSICAL REVIEW, 1968, 165 (02) :345-+

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