INGAASP INALAS SUPERLATTICE AVALANCHE PHOTODIODE

被引：42

作者：

KAGAWA, T

KAWAMURA, Y

IWAMURA, H

机构：

[1] NTT Opto-Electronics Laboratories, Atsugi-shi

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1992年 / 28卷 / 06期

关键词：

D O I：

10.1109/3.135291

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter reports the fabrication of an InGaAsP-InAlAs superlattice avalanche photodiode using a gas source molecular beam epitaxy. A quarternal alloy of InGaAsP was used for the well layers in order to suppress the dark current due to the tunneling effect. With this structure, the valence band discontinuity almost vanishes and a gain bandwidth of 110 GHz was obtained.

引用

页码：1419 / 1423

页数：5