PECULIARITIES OF SILICON-CARBIDE CRYSTAL-GROWTH IN QUASICLOSED VOLUME

被引：5

作者：

LILOV, SK

机构：

[1] Department of Semiconductor Physics, Faculty of Physics, University of Sofia, Sofia, 1126

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 1993年 / 28卷 / 03期

关键词：

D O I：

10.1002/crat.2170280303

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

On the basis of the accomplished investigation is has been shown that in the known schemes for growing of SiC epitaxial layers from the gas phase in quasiclosed volume it takes place an excretion of the redundant silicon upon the front of crystallization, its accumulation in the gas phase up to the state of the saturation and its deposition upon the growing surface as drops. In this case the growth of the epitaxial layer takes place by the vapour-liquid-solid (VLS) mechanism.

引用

页码：299 / 303

页数：5

共 10 条

[1]

Glushko V.P., 1978, TERMODINAMICHESKIE S

[2]

IVANOV RA, 1992, SEMICOND SCI TECH, V7, P863

[3]

KALINKIN PP, 1978, EPITAKSIALNIE PLENKI

[4]

Lilov S. K., 1989, Chemtronics, V4, P248

[5]

LILOV SK, 1976, KRISTALLOGRAFIYA+, V21, P1224

[6]

LILOV SK, 1975, IZV LETI, V167, P63

[7]

Tairov Y. M., 1983, Progress in Crystal Growth and Characterization, V7, P111, DOI 10.1016/0146-3535(83)90031-X

[8] GENERAL-PRINCIPLES OF GROWING LARGE-SIZE SINGLE-CRYSTALS OF VARIOUS SILICON-CARBIDE POLYTYPES [J].

TAIROV, YM ;

TSVETKOV, VF .

JOURNAL OF CRYSTAL GROWTH, 1981, 52 (APR) :146-150

[9]

TAIROV YM, 1979, PROBLEMS PHYSICS TEC, P122

[10] EPITAXIAL-GROWTH OF SILICON-CARBIDE LAYERS BY SUBLIMATION SANDWICH METHOD .1. GROWTH-KINETICS IN VACUUM [J].

VODAKOV, YA ;

MOKHOV, EN ;

RAMM, MG ;

ROENKOV, AD .

KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY, 1979, 14 (06) :729-740

← 1 →