EPITAXIAL-GROWTH OF SILICON-CARBIDE LAYERS BY SUBLIMATION SANDWICH METHOD .1. GROWTH-KINETICS IN VACUUM

被引：139

作者：

VODAKOV, YA

MOKHOV, EN

RAMM, MG

ROENKOV, AD

机构：

来源：

KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY | 1979年 / 14卷 / 06期

关键词：

D O I：

10.1002/crat.19790140618

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The growth kinetics of SiC epitaxial layers has been investigated by sublimation sandwich‐method in vacuum at temperature range from 1600 to 2100°C. The limiting stages of the crystallization process have been determined. Silicon deficit in the growth cell was shown to result in the great retarding of SiC epitaxial layers growth due to the decreasing of evaporation coefficient by a factor of 101–102 and more. The impurities introduced into the system at low supersaturations and temperatures, especially rare‐earth elements, Al, B, Cr reduce as a rule evaporation and condensation coefficients and therefore the growth rate of epitaxial layers. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：729 / 740

页数：12

共 23 条

[1]

BRANDER RW, 1974, 3 P INT C SIC, P8

[2]

CHERNOV AA, 1961, USP FIZ NAUK, V73, P279

[3]

DORFMAN VF, 1968, KRISTALLOGRAFIYA+, V13, P140

[4]

DROWART J, 1960, SILICON CARBIDE HIGH, P16

[5]

HERGENROTHER KM, 1960, SILICON CARBIDE, P60

[6]

KAMATH GS, 1968, MAT RES B S, V4, P57

[7]

Knippenberg WF., 1963, PHILIPS RES REP, V18, P161

[8] GROWTH STUDIES OF SILICON CARBIDE CRYSTALS [J].

KROKO, LJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (08) :801-&

[9]

Lely A, 1955, BER DEUT KERAM GES, V8, P229

[10] STUDIES OF GROWTH PROCESSES FROM VAPOR-PHASE OF SILICON-CARBIDE EPITAXIAL LAYERS .3. THERMODYNAMICS OF HIGH-TEMPERATURE PROCESSES IN SYSTEM SIC-N2 AT CONSTANT VOLUME [J].

LILOV, SK ;

TAIROV, YM ;

TSVETKOV, VF .

JOURNAL OF CRYSTAL GROWTH, 1977, 40 (01) :59-68

← 1 2 3 →