ORIENTATION AND VELOCITY DEPENDENCE OF SOLUTE TRAPPING IN SI

[1] DEPENDENCE OF TRAPPING AND SEGREGATION OF INDIUM IN SILICON ON THE VELOCITY OF THE LIQUID-SOLID INTERFACE [J]. APPLIED PHYSICS LETTERS, 1980, 37 (10) : 912 - 914

[2] BAERI P, UNPUBLISHED

[3] BAERI P, 1980, LASER ELECTRON BEAM, P131

[4] CARRUTHERS JR, 1977, SEMICONDUCTOR SILICO, V77

[5] SEGREGATION AND INCREASED DOPANT SOLUBILITY IN PT-IMPLANTED AND LASER-ANNEALED SI LAYERS [J]. APPLIED PHYSICS LETTERS, 1980, 36 (04) : 320 - 322

[6] FERRIS SD, 1979, LASER SOLID INTERACT

[7] Gilmer G. H., 1977, 1976 CRYSTAL GROWTH, P80

[8] P-N JUNCTIONS PRODUCED BY GROWTH RATE VARIATION [J]. PHYSICAL REVIEW, 1952, 88 (01): : 139 - 139

[9] SEGREGATION OF IMPURITIES DURING THE GROWTH OF GERMANIUM AND SILICON CRYSTALS [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1953, 57 (08) : 836 - 839

[10] FACETS AND ANOMALOUS SOLUTE DISTRIBUTIONS IN INDIUM-ANTIMONIDE CRYSTALS [J]. PHILOSOPHICAL MAGAZINE, 1959, 4 (47): : 1286 - 1288

[1] DEPENDENCE OF TRAPPING AND SEGREGATION OF INDIUM IN SILICON ON THE VELOCITY OF THE LIQUID-SOLID INTERFACE [J]. APPLIED PHYSICS LETTERS, 1980, 37 (10) : 912 - 914

[2] BAERI P, UNPUBLISHED

[3] BAERI P, 1980, LASER ELECTRON BEAM, P131

[4] CARRUTHERS JR, 1977, SEMICONDUCTOR SILICO, V77

[5] SEGREGATION AND INCREASED DOPANT SOLUBILITY IN PT-IMPLANTED AND LASER-ANNEALED SI LAYERS [J]. APPLIED PHYSICS LETTERS, 1980, 36 (04) : 320 - 322

[6] FERRIS SD, 1979, LASER SOLID INTERACT

[7] Gilmer G. H., 1977, 1976 CRYSTAL GROWTH, P80

[8] P-N JUNCTIONS PRODUCED BY GROWTH RATE VARIATION [J]. PHYSICAL REVIEW, 1952, 88 (01): : 139 - 139

[9] SEGREGATION OF IMPURITIES DURING THE GROWTH OF GERMANIUM AND SILICON CRYSTALS [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1953, 57 (08) : 836 - 839

[10] FACETS AND ANOMALOUS SOLUTE DISTRIBUTIONS IN INDIUM-ANTIMONIDE CRYSTALS [J]. PHILOSOPHICAL MAGAZINE, 1959, 4 (47): : 1286 - 1288