DEPENDENCE OF TRAPPING AND SEGREGATION OF INDIUM IN SILICON ON THE VELOCITY OF THE LIQUID-SOLID INTERFACE

被引：53

作者：

BAERI, P

POATE, JM

CAMPISANO, SU

FOTI, G

RIMINI, E

CULLIS, AG

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

[2] ROYAL SIGNALS & RADAR ESTAB,GREAT MALVERN WR14 3PS,WORCESTERSHIRE,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 10期

关键词：

D O I：

10.1063/1.91856

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：912 / 914

页数：3

相关论文

共 11 条

[1] MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS
BAERI, P
CAMPISANO, SU
FOTI, G
RIMINI, E
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) : 788 - 797
[2] BAERI P, 1980, LASER ELECTRON BEAM, P104
[3] Bloembergen N., 1979, LASER SOLID INTERACT, P1, DOI DOI 10.1063/1.31659
[4] SURFACE ACCUMULATION OF TE ATOMS IN LASER MELTED TE-IMPLANTED SILICON
CAMPISANO, SU
BAERI, P
GRIMALDI, MG
FOTI, G
RIMINI, E
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (07) : 3968 - 3970
[5] Chalmers B., 1964, PRINCIPLES SOLIDIFIC
[6] SEGREGATION AND INCREASED DOPANT SOLUBILITY IN PT-IMPLANTED AND LASER-ANNEALED SI LAYERS
CULLIS, AG
WEBBER, HC
POATE, JM
SIMONS, AL
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (04) : 320 - 322
[7] FERRIS SD, 1979, LASER SOLID INTERACT
[8] Jackson K. A., 1980, LASER ELECTRON BEAM, P104
[9] TURNBULL D, 1979, P WORKSHOP LASER IND
[10] SUPERSATURATED SUBSTITUTIONAL ALLOYS FORMED BY ION-IMPLANTATION AND PULSED LASER ANNEALING OF GROUP-III AND GROUP-V DOPANTS IN SILICON
WHITE, CW
WILSON, SR
APPLETON, BR
YOUNG, FW
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 738 - 749