SUPERSATURATED SUBSTITUTIONAL ALLOYS FORMED BY ION-IMPLANTATION AND PULSED LASER ANNEALING OF GROUP-III AND GROUP-V DOPANTS IN SILICON

被引：256

作者：

WHITE, CW

WILSON, SR

APPLETON, BR

YOUNG, FW

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 01期

关键词：

D O I：

10.1063/1.327334

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：738 / 749

页数：12

共 44 条

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JOURNAL OF CHEMICAL PHYSICS, 1953, 21 (11) :1991-1996

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