RAMAN-SCATTERING OF STRAINED GAAS-LAYERS GROWN BY MOVPE ON INP (111) A AND B

被引：11

作者：

GENNARI, S ^{[1
]}

LOTTICI, PP ^{[1
]}

ATTOLINI, G ^{[1
]}

PELOSI, C ^{[1
]}

机构：

[1] CNR INST,MASPEC,I-43100 PARMA,ITALY

来源：

SOLID STATE COMMUNICATIONS | 1994年 / 90卷 / 05期

关键词：

D O I：

10.1016/0038-1098(94)90153-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Epitaxial layers of GaAs grown by Metal Organic Vapor Phase Epitaxy on InP (111) A and B polar substrates have been investigated by Raman scattering. The tensile strain, mainly due to the lattice mismatch between GaAs and InP, has been evidenced by the red shifts of both the TO and LO GaAs phonons. From these shifts approximate values of the parallel strain have been obtained using phonon deformation potential parameters. With identical growth conditions and times, larger growth rates are found for A than for B samples.

引用

页码：291 / 294

页数：4

共 24 条

[1] INPLANE MISFIT STRAINS IN HETEROSTRUCTURES AND SUPERLATTICES - ARBITRARY DIRECTION OF GROWTH [J].