ACTIVE MODE-LOCKING OF AN EXTERNAL CAVITY GAINASP LASER INCORPORATING A FIBER-GRATING REFLECTOR

被引：6

作者：

BURNS, D

CRUST, DW

CHANG, JTK

SIBBETT, W

机构：

[1] Univ of St. Andrews, United Kingdom

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 23期

关键词：

Optical Gratings - Semiconducting Gallium Compounds - Semiconductor Diodes;

D O I：

10.1049/el:19880983

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Active mode-locking of a GaInAsP semiconductor diode amplifier, coupled to an external cavity incorporating an optical fiber grating as a bandwidth limiting and wavelength selective mirror, is reported. The grating defined the central emission wavelength to the 1.53 μm region where mode-locked pulses having durations of less than 10 ps were generated at a repetition rate of 648 MHz.

引用

页码：1439 / 1441

页数：3

共 8 条

[1] MODE-LOCKING A TI-LINBO3-INGAASP INP COMPOSITE CAVITY LASER WITH AN INTEGRATED HIGH-SPEED DIRECTIONAL COUPLER SWITCH [J].