SURFACE RECOMBINATION IN GERMANIUM IN THE PRESENCE OF STRONG ELECTRIC FIELDS

被引：7

作者：

HENISCH, HK

REYNOLDS, WN

机构：

来源：

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B | 1955年 / 68卷 / 06期

关键词：

D O I：

10.1088/0370-1301/68/6/304

中图分类号：

Q [生物科学];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

引用

页码：353 / 356

页数：4

共 9 条

[1] BRATTAIN WH, 1953, AT&T TECH J, V32, P1
[2] BRATTAIN WH, 1951, SEMICONDUCTING MATER, P37
[3] THE MOBILITY AND LIFE OF INJECTED HOLES AND ELECTRONS IN GERMANIUM
HAYNES, JR
SHOCKLEY, W
[J]. PHYSICAL REVIEW, 1951, 81 (05): : 835 - 843
[4] HENISCH HK, 1955, PHYSICA, V20, P1033
[5] KEYS R, 1954, MIT LINCOLN LAB Q PR
[6] MODULATION OF THE SURFACE CONDUCTANCE OF GERMANIUM AND SILICON BY EXTERNAL ELECTRIC FIELDS
LOW, GGE
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1955, 68 (01): : 10 - 16
[7] MEASUREMENT OF MINORITY CARRIER LIFETIME AND CONTACT INJECTION RATIO ON TRANSISTOR MATERIALS
MANY, A
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1954, 67 (409): : 9 - 17
[8] SURFACE RECOMBINATION IN GERMANIUM
REYNOLDS, WN
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1953, 66 (406): : 899 - 901
[9] Shockley W., 1950, ELECT HOLES SEMICOND, P321