THE EFFECT OF LONG-RANGE COULOMB POTENTIAL ON THE ELECTRONIC-STRUCTURE OF LOCALIZED STATES IN HOMOGENEOUS INTRINSIC AMORPHOUS-SEMICONDUCTORS

被引：14

作者：

BARANOVSKII, SD ^{[1
]}

SILVER, M ^{[1
]}

机构：

[1] UNIV N CAROLINA,DEPT PHYS & ASTRON,CHAPEL HILL,NC 27599

来源：

PHILOSOPHICAL MAGAZINE LETTERS | 1990年 / 61卷 / 02期

关键词：

D O I：

10.1080/09500839008206483

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The magnitude of the spatial and energy scales in homogeneous intrinsic amorphous semiconductors resulting from the long-ranged Coulomb potential due to a random distribution of charged defects is calculated. It is shown that, for a reasonable concentration of charges, around 1018cm-3, in the absence of strong inhomogeneities, the magnitude of the long-range potential is small and does not affect significantly the electronic structure of the localized states. With strong inhomogeneities, the theoretical situation is not clear and more research is needed. © 1990 Taylor & Francis Group, LLC.

引用

页码：77 / 81

页数：5