ION-BOMBARDMENT OF X-RAY MULTILAYER COATINGS - COMPARISON OF ION ETCHING AND ION ASSISTED DEPOSITION

被引:20
作者
PUIK, EJ [1 ]
VANDERWIEL, MJ [1 ]
ZEIJLEMAKER, H [1 ]
VERHOEVEN, J [1 ]
机构
[1] FOM, INST ATOM & MOLEC PHYS, 1098 SJ AMSTERDAM, NETHERLANDS
关键词
D O I
10.1016/0169-4332(91)90039-M
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The effects of two forms of ion bombardment treatment on the reflectivity of multilayer X-ray coatings were compared: ion etching of the metal layers, taking place after deposition, and ion bombardment during deposition, the so-called ion assisted deposition. The ion beam was an Ar+ beam of 200 eV, and the multilayer coatings studied were W-C, Ni-C and W-Si. Cu K-alpha reflection measurements (lambda = 0.154 nm) of Ni-C and W-C multilayer coatings having ion etched metal layers showed considerably higher reflectivities than those of coating having as-deposited layers; a factor 2.5 and 4, respectively. Ion etching of tungsten layers in W-Si coatings did not result in enhanced reflectivities. We applied ion assisted deposition to nickel in Ni-C multilayer coatings. We observed enhanced in-situ soft X-ray reflectivities of ion assisted deposited nickel layers with respect to as-deposited layers. However, the observed increases were less than those obtained by ion etching, which we ascribe to bombardment-induced intermixing at the underlying Ni-C interfaces. Finally we demonstrate that during ion assisted deposition and ion etch rates are not additive, but that the ion etch rate increases. The indicates that during deposition a number of atoms are temporarily loosely bound to the surface.
引用
收藏
页码:251 / 260
页数:10
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