THE EFFECTS OF CONCURRENT OXYGEN ION-BOMBARDMENT ON ION-BEAM SPUTTERED Y1BA2CU3OX THIN-FILMS

被引：3

作者：

DOYLE, JP

ROY, RA

CUOMO, JJ

机构：

[1] IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY 10598

来源：

THIN SOLID FILMS | 1990年 / 193卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(90)90236-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated the effects of substrate ion bombardment and microwave electron cyclotron resonance (ECR) assisted processing on the microstructural and electrical properties of ion beam sputtered Y1Ba2Cu3O(x) thin films. Substrate bombardment was performed using a Kaufman-type ion source or a microwave ECR gridless ion source. While substrate bombardment has been found to change the properties of the films, only in the case of ECR-assisted deposition was any sign of superconductivity observed in the as-deposited films. Results indicate that low energy oxygen ion bombardment, at low ambient pressures, simulates a high oxygen pressure ambient.

引用

页码：832 / 840

页数：9

共 12 条

[1]

AUCIELLO O, 1990, AIP C P, V200, P79

[2]

DOYLE JP, 1989, AIP C P, V182, P1150

[3]

FUJITA J, 1988, HIGH TEMPERATURE SUP, V2

[4] OXYGEN STOICHIOMETRY IN BA2YCU3OX [J].