BAND EDGE OFFSET IN STRAINED INXGA1-XAS/GAAS QUANTUM-WELLS MEASURED BY HIGH-EXCITATION PHOTOLUMINESCENCE

被引：7

作者：

KULAKOVSKII, VD ^{[1
]}

ANDERSSON, TG ^{[1
]}

BUTOV, LV ^{[1
]}

机构：

[1] ACAD SCI,INST SOLID STATE PHYS,CHERNOGOLOVKA 142432,RUSSIA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1993年 / 8卷 / 03期

关键词：

D O I：

10.1088/0268-1242/8/3/030

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new method is presented for direct and reliable determination of the band edge offset in quantum well (QW) semiconductor heterostructures. It is based on luminescence measurements at various filling levels of the valence and conduction band quantum wells. Magnetoluminescence measurements were made to independently determine the effective masses. The conduction band offset to energy gap ratio for strained InxGa1-xAs QWS in an unstrained GaAs matrix was determined to be 0.79 +/- 0.05 for x = 0.18 and 0.28.

引用

页码：477 / 480

页数：4

共 22 条

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