ELECTRONIC PROPERTIES OF MODEL AMORPHOUS-SEMICONDUCTOR STRUCTURES

Photoemission spectra and electrinic structure calculations on network models together provide at least as fine a caliper on topological statistics as the more direct probes of the structure of amorphous semiconductors. With special reference to silicon, arsenic and selenium, we summarize recent developments in the calculation of electronic densities of states of disordered covalent networks, and consider the role of such studies in the investigation of the electronic properties of amorphous materials. © 1979.